For the past four decades, electronics industry has predominantly been driven by silicon-based technology and its pursuit of Moore’s law. However, silicon will reach its scaling limit as future technology nodes will require gate lengths to be less than 10 nm. Further scaling of transistor dimensions will require reduced semiconductor thickness to maintain gate control. We are hence entering into a new era of electronics, where opportunities are opening up for researchers to search for the next switch material and develop new large-scale manufacturing processes.
Single-walled carbon nanotube (SWNT) is an ideal channel material for future electronics due to its ultra-thin body (for effective gate control at small gate lengths) and high current carrying capacity (1-D ballistic transport). In our group, we will utilize various solution-based techniques to enable SWNT-based nanoelectronics. Below are some of the projects that are being pursued.
1. Selective sorting of semiconducting SWNTs with narrow diameter range with sufficiently high yield to enable large-scale manufacturing. 2. Large-area unidirectional alignment of SWNTs with high density. 3. Characterization of electron transport in nanoscale systems. 4. Minimization of contact resistance, threshold voltage variation, and subthreshold swing.
Sorting of SWNTs by electric type
Characterization of charge transport
Large-area dense alignment of SWNTs
We are also exploring Graphene and Graphene Nanoribbon-based Transistors.